650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
268In Stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
136In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
228In Stock
240On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube