IPW65R060CFD7XKSA1

Infineon Technologies
726-IPW65R060CFD7SA1
IPW65R060CFD7XKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 268

Stock:
268 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,33 € 6,33 €
4,36 € 43,60 €
3,59 € 359,00 €
3,23 € 1.550,40 €

Similar Product

Infineon Technologies IPW65R060CM8XKSA1
Infineon Technologies
MOSFETs 650V CoolMOS CM8 Power Transistor
New Product: New from this manufacturer.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
36 A
60 mOhms
- 10 V, 10 V
3.5 V
68 nC
- 55 C
+ 150 C
171 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 13 ns
Factory Pack Quantity: 240
Subcategory: Transistors
Transistor Type: 1 N - Channel
Typical Turn-Off Delay Time: 114 ns
Typical Turn-On Delay Time: 31 ns
Part # Aliases: IPW65R060CFD7 SP005433699
Unit Weight: 6 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.