GCMX080A120B2H1P

SemiQ
148-GCMX080A120B2H1P
GCMX080A120B2H1P

Mfr.:

Description:
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module

ECAD Model:
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In Stock: 35

Stock:
35 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
35,74 € 35,74 €
30,17 € 301,70 €
30,16 € 3.016,00 €
Full Reel (Order in multiples of 40)
30,17 € 1.206,80 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
REACH - SVHC:
SiC
Press Fit
N-Channel
1.2 kV
27 A
77 mOhms
- 5 V, + 20 V
1.8 V
- 40 C
+ 175 C
119 W
GCMX
Reel
Cut Tape
Brand: SemiQ
Fall Time: 4 ns
Product Type: MOSFET Modules
Rise Time: 3 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Full Bridge
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 10 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.