UCC27211DR

Texas Instruments
595-UCC27211DR
UCC27211DR

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27211D

ECAD Model:
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In Stock: 1.732

Stock:
1.732 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,91 € 1,91 €
1,42 € 14,20 €
1,30 € 32,50 €
1,16 € 116,00 €
1,09 € 272,50 €
1,06 € 530,00 €
1,02 € 1.020,00 €
Full Reel (Order in multiples of 2500)
0,98 € 2.450,00 €
0,955 € 4.775,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
2,72 €
Min:
1

Similar Product

Texas Instruments UCC27211D
Texas Instruments
Gate Drivers 120V Boot,4A Peak,Hi Freq Hi/Lo-Side Drvr
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-8
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27211
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 76 mg
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Attributes selected: 0

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TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399999
ECCN:
EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.