LMG1205YFXT

Texas Instruments
595-LMG1205YFXT
LMG1205YFXT

Mfr.:

Description:
Gate Drivers 1.2-A 5-A 90-V hal f bridge gate driver A 595-LMG1205YFXR

ECAD Model:
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In Stock: 2.954

Stock:
2.954
Can Dispatch Immediately
On Order:
3.000
Expected 3/27/2026
Factory Lead Time:
6
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
3,55 € 3,55 €
2,68 € 26,80 €
2,47 € 61,75 €
2,23 € 223,00 €
Full Reel (Order in multiples of 250)
2,12 € 530,00 €
2,05 € 1.025,00 €
1,99 € 1.990,00 €
1,93 € 4.825,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
3,03 €
Min:
1

Similar Product

Texas Instruments LMG1205YFXR
Texas Instruments
Gate Drivers 1.2-A 5-A 90-V hal f bridge gate driver A 595-LMG1205YFXT

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
DSBGA-12
2 Driver
2 Output
5 A
4.5 V
5.5 V
7 ns
3.5 ns
- 40 C
+ 125 C
LMG1205
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Maximum Turn-Off Delay Time: 50 ns
Maximum Turn-On Delay Time: 50 ns
Operating Supply Current: 2 mA
Product Type: Gate Drivers
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: GaN
Unit Weight: 3,400 mg
Products found:
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Attributes selected: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG1205 Half-Bridge Gate Driver

Texas Instruments LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

LMG1025/LMG1025-Q1 Half-Bridge GaN Driver

The Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver  is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs, for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique. It is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V, regardless of the VDD  voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing the required flexibility to independently adjust the turn-on and turn-off strength.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.