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LMG1205YFXR

Name: Texas Instruments LMG1205YFXR
Brand: Texas Instruments
SKU: 595-LMG1205YFXR
Price: 3.1 EUR
Availability: OutOfStock

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Mouser No:

595-LMG1205YFXR

Mfr. No:

LMG1205YFXR

Mfr.:

Texas Instruments

Description:

Gate Drivers 1.2-A 5-A 90-V hal f bridge gate driver A 595-LMG1205YFXT

Datasheet:

LMG1205YFXR Datasheet

ECAD Model:

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Learn more about Texas Instruments LMG1205YFXR

Availability

Stock:: 0

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On Order:: 9.447

Expected 8/13/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,10 €	3,10 €
	2,34 €	23,40 €
	2,14 €	53,50 €
	1,94 €	194,00 €
	1,83 €	457,50 €
	1,81 €	905,00 €
	1,75 €	1.750,00 €
Full Reel (Order in multiples of 3000)
	1,63 €	4.890,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

LMG1205YFXT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

3,54 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

LMG1205YFXT

Description:

Gate Drivers 1.2-A 5-A 90-V hal f bridge gate driver A 595-LMG1205YFXR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-12
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	5 A
Supply Voltage - Min:	4.5 V
Supply Voltage - Max:	5.5 V
Rise Time:	7 ns
Fall Time:	3.5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG1205
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	MY
Country of Diffusion:	US
Country of Origin:	MY
Maximum Turn-Off Delay Time:	50 ns
Maximum Turn-On Delay Time:	50 ns
Operating Supply Current:	2 mA
Product Type:	Gate Drivers
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	GaN
Unit Weight:	3,400 mg

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Technical Resources

LMG1205 TINA-TI Reference Design (Rev. A)

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

LMG1205 Half-Bridge Gate Driver

Texas Instruments LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

LMG1025/LMG1025-Q1 Half-Bridge GaN Driver

The Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs, for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique. It is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V, regardless of the VDD voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing the required flexibility to independently adjust the turn-on and turn-off strength.