STWA65N023M9

STMicroelectronics
511-STWA65N023M9
STWA65N023M9

Mfr.:

Description:
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET

ECAD Model:
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In Stock: 366

Stock:
366 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,70 € 10,70 €
6,64 € 66,40 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
95 A
- 30 V, 30 V
4.2 V
230 nC
- 55 C
+ 150 C
Enhancement
Tube
Brand: STMicroelectronics
Product Type: MOSFETs
Series: MDmesh M9
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 6,100 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.