TP65H300G4LSG

Renesas Electronics
227-TP65H0300G4LSG
TP65H300G4LSG

Mfr.:

Description:
GaN FETs GAN FET 650V 6.5A PQFN88

Lifecycle:
Restricted Availability:
This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
Mouser does not presently sell this product in your region.

Availability

Stock:

Alternative Packaging

Mfr. Part No.:
TP65H300G4LSG-TR
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
4,23 €
Min:
1

Similar Product

Renesas Electronics TP65H300G4LSG-TR
Renesas Electronics
GaN FETs 650V, 240mOhm
Restricted Availability: This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
PQFN-8x8-3
N-Channel
1 Channel
650 V
6.5 A
312 mOhms
- 18 V, + 18 V
2.6 V
9.6 nC
- 55 C
+ 150 C
21 W
Enhancement
SuperGaN
Brand: Renesas Electronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 10 ns
Moisture Sensitive: Yes
Packaging: Tube
Product Type: GaN FETs
Rise Time: 3.4 ns
Series: TP65H
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 53 ns
Typical Turn-On Delay Time: 19.4 ns
Unit Weight: 4,096 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.