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TP65H300G4LSG-TR

Name: Renesas Electronics TP65H300G4LSG-TR
Brand: Renesas Electronics
SKU: 227-TP65H300G4LSG-TR
Price: 4.23 EUR
Availability: LimitedAvailability

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Mouser No:

227-TP65H300G4LSG-TR

Mfr. No:

TP65H300G4LSG-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 240mOhm

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

TP65H300G4LSG-TR Datasheet (PDF)

ECAD Model:

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In Stock: 259

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,23 €	4,23 €
	2,67 €	26,70 €
	1,92 €	192,00 €
	1,81 €	905,00 €
Full Reel (Order in multiples of 3000)
	1,53 €	4.590,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8x8-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	6.5 A
Rds On - Drain-Source Resistance:	492 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	9.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	21 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	Gen IV SuperGaN
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT

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Datasheet

TP65H300G4LSG-TR Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.