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CGHV60075D5-GP4

Name: MACOM CGHV60075D5-GP4
Brand: MACOM
SKU: 941-CGHV60075D
Price: 189.85 EUR
Availability: InStock

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Mouser No:

941-CGHV60075D

Mfr. No:

CGHV60075D5-GP4

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT Die DC-6.0GHz, 75 Watt

Datasheet:

CGHV60075D5-GP4 Datasheet (PDF)

ECAD Model:

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Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 10

Stock:: 10 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 10 will be subject to minimum order requirements.

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	189,85 €	1.898,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	Die
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	280 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 10 V, 2 V
Pd - Power Dissipation:	41.6 W
Brand:	MACOM
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	17 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	75 W
Packaging:	Gel Pack
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	150 V

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5-0614-38

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Datasheet

CGHV60075D5-GP4 Datasheet (PDF)

PCN

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TARIC:: 8542399000
CNHTS:: 8542319090
CAHTS:: 8542330000
USHTS:: 8541290040
KRHTS:: 8532331000
MXHTS:: 8542399901
ECCN:: 3A001.b.3.a.4

CGHV600 6GHz GaN HEMTs

Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.
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