MACOM CGHV60040D & CGHV60075D5 6GHz GaN HEMTs
MACOM CGHV60040D and CGHV60075D5 6GHz Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. These GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Both series also offer greater power density and wider bandwidths and are ideal for a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers. These 6GHz GaN HEMTs are offered as bare die with an overall size of 820μm x 1800μm x 100μm for CGHV60040D and 3000μm x 820μm x 100μm for CGHV60075D5.
Features
- CGHV60040D
- 18dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 40W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 820μm x 1800μm x 100μm bare die
- CGHV60075D5
- 19dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 75W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 3000μm x 820μm x 100μm bare die
Applications
- 2-way private radio
- Broadband amplifiers
- Cellular infrastructure
- Test instrumentation
- Class A, AB, and linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms
CGHV60040D Mechanical Drawing
CGHV60075D5 Mechanical Drawing
Related HEMTs
MACOM CMPA0530002S GaN HEMT
Specially designed for high efficiency, high gain, and wide bandwidth capabilities.