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ISG0614N06NM5HSCATMA1

Name: Infineon ISG0614N06NM5HSCATMA1
Brand: Infineon Technologies
SKU: 726-ISG0614N06NM5HSC
Price: 4.32 EUR
Availability: InStock

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Mouser No:

726-ISG0614N06NM5HSC

Mfr. No:

ISG0614N06NM5HSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISG0614N06NM5HSCATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISG0614N06NM5HSCATMA1

In Stock: 2.708

Stock:: 2.708 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,32 €	4,32 €
	3,02 €	30,20 €
	2,16 €	216,00 €
	1,93 €	965,00 €
	1,87 €	1.870,00 €
Full Reel (Order in multiples of 3000)
	1,76 €	5.280,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TFN-10
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	233 A
Rds On - Drain-Source Resistance:	1.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	6.8 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	8.7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	18 ns
Part # Aliases:	ISG0614N06NM5HSC SP005575184

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Datasheet

ISG0614N06NM5HSCATMA1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More