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ISC0802NLSATMA1

Name: Infineon ISC0802NLSATMA1
Brand: Infineon Technologies
SKU: 726-ISC0802NLSATMA1
Price: 0.56 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

726-ISC0802NLSATMA1

Mfr. No:

ISC0802NLSATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Lifecycle:

Verify Status with Factory:

Lifecycle information is unclear. Obtain a quote to verify the availability of this part number from the manufacturer.

Datasheet:

ISC0802NLSATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISC0802NLSATMA1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 8 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 5000 Multiples: 5000

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 5000)
	0,565 €	2.825,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	3.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	5000
Subcategory:	Transistors
Part # Aliases:	ISC0802NLS SP005430372

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Datasheet

ISC0802NLSATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

OptiMOS™ PD (Power Delivery) MOSFETs

Infineon Technologies OptiMOS™ PD (Power Delivery) MOSFETs are ideal for USB-PD and fast-charger designs, supporting short lead and quick-quote response times. The logic-level MOSFETs in PQFN 3.3mm x 3.3mm and SuperSO8 packages have been optimized for synchronous rectification in charger and adapter 25V to 150V SMPS applications. The logic-level drive provides a low gate threshold voltage (VGS(th)), allowing low- and medium-voltage MOSFETs to be driven from 4.5V or directly from microcontrollers, leading to a lower part count in the application.