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ISC028N04NM5ATMA1

Name: Infineon ISC028N04NM5ATMA1
Brand: Infineon Technologies
SKU: 726-ISC028N04NM5ATMA
Price: 1.4 EUR
Availability: InStock

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Mouser No:

726-ISC028N04NM5ATMA

Mfr. No:

ISC028N04NM5ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

ISC028N04NM5ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies ISC028N04NM5ATMA1

In Stock: 13.077

Stock:: 13.077 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,40 €	1,40 €
	0,851 €	8,51 €
	0,588 €	58,80 €
	0,461 €	230,50 €
	0,386 €	386,00 €
Full Reel (Order in multiples of 5000)
	0,353 €	1.765,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	121 A
Rds On - Drain-Source Resistance:	2.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	5000
Subcategory:	Transistors
Part # Aliases:	ISC028N04NM5 SP005399107
Unit Weight:	369,800 mg

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Datasheet

ISC028N04NM5ATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low R_DS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.