ISC028N04NM5ATMA1

Infineon Technologies
726-ISC028N04NM5ATMA
ISC028N04NM5ATMA1

Mfr.:

Description:
MOSFETs IFX FET 40V

ECAD Model:
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In Stock: 13.081

Stock:
13.081 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,31 € 1,31 €
0,826 € 8,26 €
0,55 € 55,00 €
0,432 € 216,00 €
0,378 € 378,00 €
0,372 € 930,00 €
Full Reel (Order in multiples of 5000)
0,353 € 1.765,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
TDSON-FL-8
N-Channel
1 Channel
40 V
121 A
2.8 mOhms
- 20 V, 20 V
2.2 V
29 nC
- 55 C
+ 175 C
75 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: DE
Country of Origin: DE
Product Type: MOSFETs
Factory Pack Quantity: 5000
Subcategory: Transistors
Part # Aliases: ISC028N04NM5 SP005399107
Unit Weight: 369,800 mg
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.