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IQE022N06LM5CGSCATMA1

Name: Infineon IQE022N06LM5CGSCATMA1
Brand: Infineon Technologies
SKU: 726-IQE022N06LM5CGSC
Price: 2.75 EUR
Availability: InStock

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Mouser No:

726-IQE022N06LM5CGSC

Mfr. No:

IQE022N06LM5CGSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IQE022N06LM5CGSCATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IQE022N06LM5CGSCATMA1

In Stock: 3.518

Stock:: 3.518 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,75 €	2,75 €
	1,96 €	19,60 €
	1,95 €	48,75 €
	1,37 €	137,00 €
	1,15 €	575,00 €
	1,09 €	1.090,00 €
Full Reel (Order in multiples of 6000)
	1,03 €	6.180,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WHSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	151 A
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	5.9 ns
Product Type:	MOSFETs
Rise Time:	4.1 ns
Series:	OptiMOS 5
Factory Pack Quantity:	6000
Subcategory:	Transistors
Transistor Type:	1 N Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	6.1 ns
Part # Aliases:	IQE022N06LM5CGSC SP005632163

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Datasheet

IQE022N06LM5CGSCATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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