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IQDH35N03LM5CGATMA1

Name: Infineon IQDH35N03LM5CGATMA1
Brand: Infineon Technologies
SKU: 726-IQDH35N03LM5CGAT
Price: 3.69 EUR
Availability: InStock

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Mouser No:

726-IQDH35N03LM5CGAT

Mfr. No:

IQDH35N03LM5CGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 15V-30V

Datasheet:

IQDH35N03LM5CGATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IQDH35N03LM5CGATMA1

In Stock: 2.450

Stock:: 2.450

Can Dispatch Immediately

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On Order:: 5.000

Expected 8/6/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,69 €	3,69 €
	2,43 €	24,30 €
	1,81 €	181,00 €
	1,61 €	805,00 €
	1,38 €	1.380,00 €
	1,30 €	3.250,00 €
Full Reel (Order in multiples of 5000)
	1,30 €	6.500,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	700 A
Rds On - Drain-Source Resistance:	350 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	91 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	265 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	OptiMOS 5
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	IQDH35N03LM5CG SP005588818

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Datasheet

IQDH35N03LM5CGATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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