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IQD020N10NM5CGATMA1

Name: Infineon IQD020N10NM5CGATMA1
Brand: Infineon Technologies
SKU: 726-IQD020N10NM5CGAT
Price: 3.54 EUR
Availability: InStock

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Mouser No:

726-IQD020N10NM5CGAT

Mfr. No:

IQD020N10NM5CGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Datasheet:

IQD020N10NM5CGATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IQD020N10NM5CGATMA1

In Stock: 4.353

Stock:: 4.353 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,54 €	3,54 €
	2,47 €	24,70 €
	2,12 €	212,00 €
	2,06 €	1.030,00 €
	1,99 €	1.990,00 €
Full Reel (Order in multiples of 5000)
	1,85 €	9.250,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	273 A
Rds On - Drain-Source Resistance:	2.05 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	107 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	OptiMOS 5
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	IQD020N10NM5CG SP005588861

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Datasheet

IQD020N10NM5CGATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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