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IPT60R180CM8XTMA1

Name: Infineon IPT60R180CM8XTMA1
Brand: Infineon Technologies
SKU: 726-IPT60R180CM8XTMA
Price: 2.29 EUR
Availability: InStock

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Mouser No:

726-IPT60R180CM8XTMA

Mfr. No:

IPT60R180CM8XTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs HIGH POWER_NEW

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IPT60R180CM8XTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPT60R180CM8XTMA1

In Stock: 2.754

Stock:: 2.754 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,29 €	2,29 €
	1,37 €	13,70 €
	0,989 €	98,90 €
	0,82 €	410,00 €
	0,771 €	771,00 €
Full Reel (Order in multiples of 2000)
	0,719 €	1.438,00 €
	0,696 €	2.784,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	119 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	12.8 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	600V CM8
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	88.4 ns
Typical Turn-On Delay Time:	17.2 ns
Part # Aliases:	IPT60R180CM8 SP005578053

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Datasheet

IPT60R180CM8XTMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.

CoolMOS™ C7 Gold (G7) Power MOSFETs

Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high-end LLC.

CoolMOS™ Power Transistors

Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.