IMLT65R026M2HXTMA1

Infineon Technologies
726-IMLT65R026M2HXTM
IMLT65R026M2HXTMA1

Mfr.:

Description:
SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies IMLT65R026M2HXTMA1

In Stock: 1.048

Stock:
1.048
Can Dispatch Immediately
On Order:
1.800
Expected 2/20/2026
Factory Lead Time:
25
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,59 € 9,59 €
7,50 € 75,00 €
6,25 € 625,00 €
5,57 € 2.785,00 €
4,73 € 4.730,00 €
Full Reel (Order in multiples of 1800)
4,73 € 8.514,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
N-Channel
1 Channel
650 V
82 A
33 mOhms
- 10 V, + 25 V
5.6 V
42 nC
- 55 C
+ 175 C
365 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Fall Time: 5.1 ns
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 10.1 ns
Series: 650V G2
Factory Pack Quantity: 1800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 9.3 ns
Part # Aliases: IMLT65R026M2H SP005969467
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies  CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion.  Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

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