IMDQ75R004M2HXTMA1

Infineon Technologies
726-IMDQ75R004M2HXTM
IMDQ75R004M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC MOSFET 750 V G2

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies IMDQ75R004M2HXTMA1

In Stock: 122

Stock:
122
Can Dispatch Immediately
On Order:
600
Expected 3/20/2026
750
TBD
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 750)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
43,86 € 43,86 €
38,40 € 384,00 €
38,11 € 3.811,00 €
Full Reel (Order in multiples of 750)
35,58 € 26.685,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
PG-HDSOP-22
N-Channel
840 V
357 A
5 mOhms
- 7 V to + 23 V
5.6 V
342 nC
- 55 C
+ 175 C
1.499 kW
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Fall Time: 13 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 24 ns
Factory Pack Quantity: 750
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 24 ns
Part # Aliases: IMDQ75R004M2H SP006065921
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

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