IMCQ120R078M2HXTMA1

Infineon Technologies
726-IMCQ120R078M2HXT
IMCQ120R078M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 919

Stock:
919 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,14 € 7,14 €
4,85 € 48,50 €
3,55 € 355,00 €
3,24 € 1.620,00 €
Full Reel (Order in multiples of 750)
3,24 € 2.430,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
PG-HDSOP-22-U03
N-Channel
1 Channel
1.2 kV
31 A
205 mOhms
- 10 V, + 25 V
5.1 V
23.2 nC
- 55 C
+ 175 C
176 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Fall Time: 4.8 ns
Forward Transconductance - Min: 3 S
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 3.2 ns
Series: 1200 V G2
Factory Pack Quantity: 750
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 11.7 ns
Typical Turn-On Delay Time: 5 ns
Part # Aliases: IMCQ120R078M2H SP005974971
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99