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IMBG120R350M1HXTMA1

Name: Infineon IMBG120R350M1HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG120R350M1HXT
Price: 4.91 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-IMBG120R350M1HXT

Mfr. No:

IMBG120R350M1HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet:

IMBG120R350M1HXTMA1 Datasheet (PDF)

ECAD Model:

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In Stock: 1.375

Stock:: 1.375 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,91 €	4,91 €
	3,28 €	32,80 €
	2,54 €	254,00 €
	2,25 €	1.125,00 €
Full Reel (Order in multiples of 1000)
	2,00 €	2.000,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	4.7 A
Rds On - Drain-Source Resistance:	468 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	5.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	16 ns
Forward Transconductance - Min:	1.2 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	0.7 ns
Series:	CoolSiC 1200V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	6.3 ns
Part # Aliases:	IMBG120R350M1H SP004463802

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Datasheet

IMBG120R350M1HXTMA1 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.