IMBG120R078M2HXTMA1

Infineon Technologies
726-IMBG120R078M2HXT
IMBG120R078M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Datasheet:
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Learn more about Infineon Technologies IMBG120R078M2HXTMA1

In Stock: 1.211

Stock:
1.211 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,76 € 6,76 €
4,58 € 45,80 €
3,35 € 335,00 €
3,27 € 1.635,00 €
Full Reel (Order in multiples of 1000)
3,05 € 3.050,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
29 A
78.1 mOhms
- 7 V, + 20 V
5.1 V
20.6 nC
- 55 C
+ 175 C
158 W
Enhancement
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Fall Time: 2 ns
Forward Transconductance - Min: 4.1 s
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 13.4 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 3.4 ns
Typical Turn-On Delay Time: 2 ns
Part # Aliases: IMBG120R078M2H -
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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