IMBG120R022M2HXTMA1

Infineon Technologies
726-IMBG120R022M2HXT
IMBG120R022M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Datasheet:
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Learn more about Infineon Technologies IMBG120R022M2HXTMA1

In Stock: 386

Stock:
386 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
13,63 € 13,63 €
9,81 € 98,10 €
8,41 € 841,00 €
Full Reel (Order in multiples of 1000)
7,85 € 7.850,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
87 A
21.6 mOhms
- 7 V, + 20 V
5.1 V
71 nC
- 55 C
+ 175 C
385 W
Enhancement
Brand: Infineon Technologies
Configuration: Single
Fall Time: 7.4 ns
Forward Transconductance - Min: 14.8 s
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: SiC MOSFETS
Rise Time: 16.9 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 11.3 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: IMBG120R022M2H -
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Datasheet

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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