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IXTK400N15X4

Name: IXYS IXTK400N15X4
Brand: IXYS
SKU: 747-IXTK400N15X4
Price: 53.35 EUR
Availability: InStock

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Mouser No:

747-IXTK400N15X4

Mfr. No:

IXTK400N15X4

Mfr.:

IXYS

Description:

MOSFETs TO264 150V 400A N-CH 4CLASS

Datasheet:

IXTK400N15X4 Datasheet

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In Stock: 1.534

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	53,35 €	53,35 €
	51,09 €	510,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	400 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	430 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.5 kW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	8 ns
Forward Transconductance - Min:	100 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	X4-Class
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	180 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	10 g

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Datasheet

IXTK400N15X4 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance R_DS(on) and gate charge Q_g. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

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HiPerFET™ Power MOSFETs

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