IXFK180N07

IXYS
747-IXFK180N07
IXFK180N07

Mfr.:

Description:
MOSFETs 180 Amps 70V 0.006 Rds

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
34 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 25   Multiples: 25
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
15,65 € 391,25 €
13,53 € 1.353,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
70 V
180 A
6 mOhms
- 20 V, 20 V
- 55 C
+ 150 C
560 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 55 ns
Forward Transconductance - Min: 90 S/55 S
Product Type: MOSFETs
Rise Time: 90 ns
Series: HiPerFET
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 140 ns
Typical Turn-On Delay Time: 65 ns
Unit Weight: 10 g
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TARIC:
8541500000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99

Standard N-Channel HiPerFET™ Power MOSFETs

IXYS Standard N-Channel HiPerFET™ Power MOSFETs are designed for both hard switching and resonant mode applications. These devices offer low gate charge and excellent ruggedness with a fast intrinsic diode. IXYS Standard N-Channel HiPerFET™ Power MOSFETs are available in many standard industrial packages, including isolated types.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.