IXFH6N120P

IXYS
747-IXFH6N120P
IXFH6N120P

Mfr.:

Description:
MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A

Datasheet:
ECAD Model:
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Learn more about IXYS IXFH6N120P

In Stock: 187

Stock:
187 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,87 € 12,87 €
9,80 € 98,00 €
8,16 € 979,20 €
7,18 € 3.661,80 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
6 A
2.75 Ohms
- 30 V, 30 V
5 V
92 nC
- 55 C
+ 150 C
250 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 14 ns
Forward Transconductance - Min: 3 S
Product Type: MOSFETs
Rise Time: 11 ns
Series: HiPerFET
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 24 ns
Unit Weight: 6 g
Products found:
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

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