Toshiba TLP570x GaAℓAs Photocouplers

Toshiba TLP570x GaAℓAs Photocouplers integrate an aluminum gallium arsenide infrared Light-Emitting Diode (LED) optically coupled to an integrated high-gain, high-speed photodetector in a compact 6-pin SO6L package. The TLP570x series is physically smaller and thinner than a photocoupler in an 8-pin DIP package and complies with international safety standards for reinforced insulation. Toshiba TLP570x GaAlAs Photocouplers feature a smaller footprint solution for applications that require a safety standard certification. An internal noise shield delivers a guaranteed common-mode transient immunity of 20kV/μs.

The Toshiba TLP570x GaAℓAs Photocouplers are available in standard SO6L and wide-lead SO6L (LF4) package variants. These devices are ideal for use as a small to medium class IGBT or a power MOSFET gate driver.

Features

Buffer logic type (totem pole output)
2.5A to 5.0A peak current output range
2.0A to 3.0A supply current range
200ns to 500ns propagation delay range
5.0 maximum threshold input current
±20kV/µs to ±50kV/µs minimum common-mode transient immunity
Operating temperature range
- -40°C to +110°C (TLP5701, TLP5702)
- -40°C to +125°C (TLP5702H, TLP5705H)

5000Vrms isolation voltage
6-pin SO6L package with standard and wide lead (LF4) options
Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Option D4)
- CQC-approved: GB4943.1, GB8898