Mouser Now Shipping United SiC UF3SCxB7S SiC FETs
July 1, 2021 - Mouser Electronics, Inc., the industry's leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking the UF3C SiC FETs in D2-PAK package from UnitedSiC.
UnitedSiC UF3C SiC FETs, in the 7-lead D2-PAK surface mount package, are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants. Applications for the UF3C SiC FETs include telecom and server power, industrial power supplies, power factor correction modules, motor drives, and induction heating.
To learn more, visit https://www.mouser.com/new/unitedsic/unitedsic-uf3cx80b7s-sic-fets/.
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