Now at Mouser: NXP A3G26D055N Airfast GaN Transistor for 5G MIMO Antennas
September 1, 2021 - Mouser Electronics, Inc., the industry's leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking the A3G26D055N Airfast® RF power gallium nitride (GaN) transistor from NXP Semiconductors.
The NXP A3G26D055N transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This 8W symmetrical Doherty RF transistor provides a wide frequency range from 100MHz to 2690MHz. The device offers an 18db power gain (typical) at 2675MHz with 54.1% efficiency. The A3G26D055N also features high terminal impedances and a highly linearized Error Vector Magnitude (EVM), making it optimal for massive MIMO active antenna systems for 5G base stations.
Applications for the NXP A3G26D055N transistor include 5G massive MIMO, W-CDMA and LTE, macrocell base stations and drivers, small cell final stage, active antennas, and general-purpose telecom.
To learn more, visit https://www.mouser.com/new/nxp-semiconductors/nxp-a3g26d055n-airfast-rf-power-gan-transistor/.
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