Vishay General Semiconductor VTx080 Trench MOS Barrier Schottky Rectifiers
Vishay General Semiconductor VT1080 and VT3080 Dual Trench MOS Barrier Schottky Rectifiers and VT2080 Trench MOS Barrier Schottky Rectifiers feature low forward voltage drop, low power losses, and high-efficiency operation. VT1080 Dual Trench MOS Barrier Schottky Rectifiers feature ultra-low forward voltage of 0.49V at IF=3A. VT2080 Trench MOS Barrier Rectifiers offer an ultra-low forward voltage of 0.46V at IF=5A. VT3080 Dual Trench MOS Barrier Schottky Rectifiers feature ultra-low forward voltage of 0.46V at IF=5A.
Vishay General Semiconductor VT1080, VT2080, and VT3080 Trench MOS Barrier Schottky Rectifiers are designed for use in high-frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC-DC converter, and reverse battery protection applications.
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package)
- Solder bath temperature 275°C maximum, 10s, per JESD 22-B106
View Results ( 6 ) Page
| Part Number | Datasheet | If - Forward Current | Vf - Forward Voltage | Ir - Reverse Current |
|---|---|---|---|---|
| VT1080S-E3/4W |  |
10 A | 670 mV | 20 uA |
| VT1080C-E3/4W | |
5 A | 630 mV | 12 uA |
| VT2080C-E3/4W | |
10 A | 670 mV | 20 uA |
| VT2080S-E3/4W | |
20 A | 800 mV | 30 uA |
| VT3080C-E3/4W | |
15 A | 750 mV | 30 uA |
| VT3080S-E3/4W | |
30 A | 820 mV | 70 uA |
Published: 2011-01-19
| Updated: 2022-03-11