Vishay Semiconductors MAACPAK PressFit SiC MOSFET Power Modules
Vishay Semiconductors MAACPAK PressFit SiC MOSFET Power Modules are 1200V modules designed to increase efficiency and reliability for medium-to-high frequency applications in automotive, energy, industrial, and telecom systems. Offering four and six MOSFETs, respectively, in the low-profile MAACPAK PressFit package, the Vishay Semiconductors VS-MPY038P120 and VS-MPX075P120 combine advanced silicon carbide (SiC) technology with a rugged transfer mold construction. The power modules integrate SiC MOSFETs with an NTC thermistor for temperature sensing and fast intrinsic SiC diodes with low reverse recovery. The result is reduced switching losses and increased efficiency.
For increased reliability, the rugged transfer mold technology of the VS-MPY038P120 and VS-MPX075P120 allows the devices to achieve longer product lifecycles than legacy solutions available on the market, while improving thermal resistance. For more efficient, cleaner switching, the MAACPAK power modules' low profile helps reduce parasitic inductance and EMI, while saving space. The modules’ PressFit pins are arranged in a matrix that adheres to industry-standard layouts, allowing for easy replacement of competing solutions in existing designs to enhance performance.
Features
- Integrated silicon carbide power MOSFET
- Integrated fast intrinsic diode with low reverse recovery (Qrr)
- Integrated NTC thermistors for temperature sensing
- High 1200V blocking voltage with low on-resistance (down to 38Ω)
- High-speed switching with low capacitance
- Maximum +175°C junction temperature
- PressFit pin locking technology
- Circuit configuration options
- Full bridge inverter (VS-MPY038P120)
- Three-phase inverter (VS-MPX075P120)
- Rugged transfer mold construction
- Low profile MAACPAK PressFit package
- UL pending
- Lead-free, Halogen-free, and RoHS-compliant
Applications
- EV chargers
- Server and telecom power supply units (PSU)
- Uninterruptible power supplies (UPS)
- Off-board chargers for electric (EV) and hybrid electric (HEV) vehicles
- Motor drives
- Welding equipment
- Solar inverters
- Switch-mode power supplies (SMPS)
- DC/DC converters
- HVAC systems
- Large-scale battery storage systems
Specifications
- MOSFET
- 1200V maximum drain-to-source voltage
- Continuous drain current at 15V gate-to-source voltage
- 35A to 43A maximum for VS-MPY038P120
- 18A to 22A maximum for VS-MPX075P120
- 100A to 180A maximum pulsed drain current range
- 47.5W to 93W maximum power dissipation range
- -8V/+19V maximum gate-to-source voltage, -4V/+15V recommended operating range
- Module
- -55°C to +175°C maximum junction temperature range
- -40°C to +150°C maximum operating junction temperature range
- -40°C to +150°C maximum operating storage temperature range
- 3500VRMS maximum insulation voltage
- 1200V minimum drain-to-source breakdown voltage
- 33mΩ to 128mΩ static drain-to-source on-resistance range
- 1.6V to 3.8V gate threshold voltage range
- -5.9mV/°C to -5.0mV/°C typical temperature coefficient of threshold voltage range
- 12.4S to 27.3S typical forward transconductance
- 60μA to 120μA maximum drain-to-source leakage current range
- ±250nA maximum gate-to-source leakage
- 56nC to 100nC typical total gate charge range
- 17nC to 33nC typical gate-to-source charge range
- 18nC to 27nC typical gate-to-drain (Miller) charge range
- 0.193mJ to 0.508mJ typical turn-on switching energy range
- 0.074mJ to 0.152mJ typical turn-off switching energy range
- 13ns to 15ns typical turn-on delay time range
- 12ns to 14ns typical rise time range
- 35ns to 44ns typical turn-off delay time range
- 10ns to 11ns typical fall-time range
- 1489pF to 2979pF typical input capacitance range
- 85pF to 91pF typical output capacitance range
- 6.1pF to 8.9pF typical reverse transfer capacitance range
- Source-to-drain ratings and characteristics
- 100A to 189A maximum pulsed source current (body diode) range
- 5.75V to 5.96V typical diode forward voltage range
- 14.4ns to 15ns typical reverse recovery time range
- 198nC to 346nC typical reverse recovery charge range
- 26A to 38.3A typical reverse recover charge
- Internal NTC - thermistor
- 10KΩ resistance
- 3430K ±3% B constant
- -40°C to +150°C operating temperature range at zero power
- 3.5mW/K dissipation factor
- ≈10s thermal time constant
- Thermal resistance
- 0.9°C/W to 1.8°C/W typical junction-to-sink range
- 0.1°C/W typical case-to-sink
- Mechanical
- 0.7Nm to 1.7Nm mounting torque range (M3)
- 16g typical weight
- MAACPAK package
Datasheets
- VS-MPY038P120 MAACPAK PressFit Power Module, Full Bridge Inverter Silicon Carbide MOSFET, 38mΩ
- VS-MPX075P120 MAACPAK PressFit Power Module, Three Phase Inverter 1200V Silicon Carbide MOSFET, 75mΩ
CIRCUIT CONFIGURATION
