Toshiba U-MOSVI-H MOSFETs
Toshiba U-MOSVI-H MOSFETs are high-speed switching MOSFETs featuring a small gate charge, low drain-source on-resistance, and high forward transfer admittance. These Toshiba MOSFETs provide a small footprint thanks to their small and thin DPAK and SOP Advance packages. The U-MOSVI-H series is ideal for a wide range of applications, such as notebook PCs, motor drives, portable equipment, and high-efficiency DC-DC converters.
Features
- Logic-level gate drive
- 2.3mΩ to 74Ω maximum drain-source on-resistance RDS(ON) (at VGS = 10V)
- 40V to 60V drain-source voltage
- ±20V gate-source voltage
- 6.1A to 50A drain current
- 1.5W to 60W power dissipation
- 850pF to 5800pF input capacitance
Applications
- High-efficiency DC-DC converter
- Notebook PCs
- Portable equipment
- Motor drives
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- Calculating the Temperature of Discrete Semiconductor Devices
- IGBTs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Published: 2019-10-02
| Updated: 2026-03-25