Toshiba U-MOSIV MOSFETs
Toshiba U-MOSIV MOSFETs are offered in logic-level gate drive, low-voltage gate drive, and 10V gate drive variants in N-channel and P-channel polarity. The U-MOSIV MOSFETs offer low drain-source ON-resistance and low leakage current. These devices are offered in through-hole and surface mount packages and are ideal for motor driver, DC-DC converter, and switching voltage regulator applications.
Features
- Logic-level gate drive, low-voltage gate drive, and 10V gate drive
- 0.0031Ω to 2.1Ω (@VGS = 10V) maximum drain-source on-resistance (RDS(ON))
- -20V to 100V drain-source voltage (VDSS)
- ±10V to ±8V gate-source voltage (VGSS)
- -4.0A to 100.0A drain current (ID)
- 1.5W to 180.0W power dissipation (PD)
- 17pF to 8200pF input capacitance (CISS)
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Published: 2019-10-02
| Updated: 2023-12-08