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Toshiba TK2R9E10PL Silicon N-channel MOSFET

Toshiba TK2R9E10PL Silicon N-channel MOSFET is a high-speed switching device with a small gate charge of 48nC. The device features a small output charge of 164nC. Toshiba TK2R9E10PL also has a low drain-source on-resistance RDS(ON) of 2.4mΩ and low leakage current.

Features

  • High-speed switching
  • 48nC (typ.) gate charge
  • 2.4mΩ (typ.) (VGS = 10V) drain-source on-resistance
  • 164nC (typ.) output charge
  • 10µA (max) (VDS = 100V) low leakage current
  • 1.5 to 2.5V (VDS = 10V, ID = 1mA) enhancement mode

Applications

  • High-efficiency DC-DC converters
  • Switching voltage regulators
  • Motor drivers

Packaging and Internal Circuit

Application Circuit Diagram - Toshiba TK2R9E10PL Silicon N-channel MOSFET
Published: 2019-02-22 | Updated: 2023-12-07