Toshiba ST2000JXH35A 6500V/2000A Press-Pack IEGTs
Toshiba ST2000JXH35A 6500V/2000A Press-Pack Injection Enhanced Gate Transistors (IEGTs) deliver high turn-off capability and robust short-circuit withstand performance. These Toshiba IEGTs provide a turn-off test voltage of 4500V and a collector-emitter voltage of 6500V, streamlining the design of high-voltage systems. The ST2000JXH35A features a press-pack design that supports double-sided cooling and a hermetic sealing structure, ensuring the reliability required for long-term industrial operation. ST2000JXH35A IEGTs permit higher voltage ratings and more compact form factors for industrial motor drives and reactive power compensation devices that stabilize power systems.
Features
- High turn-off capability and robust short-circuit withstand performance
- High reliability due to hermetic sealing structure
- Double-sided cooling type
- 4500V short-circuit tested
- 6500V collector-emitter voltage
- 2000A collector current
Applications
- Electric power transmission and distribution
- Motor controllers
- High-power switching
Packaging & Internal Circuit
Test Circuit
Dimensions
Published: 2026-02-20
| Updated: 2026-02-23