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Taiwan Semiconductor 30V Single N-Channel Power MOSFETs

Taiwan Semiconductor 30V Single N-Channel Power MOSFETs feature a low RDS(ON) (drain-source on-state resistance), which minimizes conductive losses. These devices also feature a low gate charge for fast switching. These N-Channel Power MOSFETs are ideal for battery power management, load switching, motor control, and DC-DC converter applications.

Features

  • Low RDS(ON) to minimize conductive losses
  • Low gate charge for fast power switching
  • 30V drain-source voltage (VDS)
  • ±20V gate-source voltage (VGS)
  • -55°C to +175°C operating junction and storage temperature range (TJ, TSTG)
  • 100% UIS and Rg tested
  • Lead-free and RoHS compliant
  • Halogen-free according to IEC 61249-2-21
  • PDFN56 package

Applications

  • Motor control
  • Battery power management
  • DC-DC converters
  • Load switches

Datasheets

Package Outline

Mechanical Drawing - Taiwan Semiconductor 30V Single N-Channel Power MOSFETs
Published: 2019-12-18 | Updated: 2023-06-26