STMicroelectronics STP65N150M9 Power MOSFET
STMicroelectronics STP65N150M9 Power MOSFET is based on super-junction MDmesh M9 technology. The device is suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it ideal for applications that require superior power density and outstanding efficiency.
Features
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- Zener-protected
- Applications
- High-efficiency switching applications
Associated Products
STMicroelectronics MDmesh™ M9 Power MOSFETs
Feature enhanced device structure, low ON resistance, and low gate charge values.
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STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
Published: 2022-10-18
| Updated: 2023-02-13