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ROHM Semiconductor RQ3L060BG Power MOSFET

ROHM Semiconductor RQ3L060BG Power MOSFET features 60V drain-source voltage (VDSS) and ±15.5A continuous drain current. This N-channel MOSFET offers 38mΩ low on-resistance (RDS(on)) and power dissipation of 14W. The RQ3L060BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, High-Power Small Mold Package (HSMT8). This RoHS-compliant device incorporates Pb-free plating. Typical applications include switching, motor drives, and DC/DC converters.

Features

  • Low on - resistance
  • High Power Small Mold Package (HSMT8)
  • Pb-free plating and RoHS-compliant
  • Halogen free
  • 100% Rg and UIStested

Specifications

  • 60V drain-source voltage (VDSS)
  • ±20V gate-source voltage (VGSS)
  • -55°C to 150°C operating junction and storage temperature range
  • 38mΩ RDS(on)(maximum)
  • ±15.5A continuous drain current (ID)
  • 14W power dissipation 

Applications

  • Switching
  • Motor drives
  • DC/DC converters

Inner Circuit

ROHM Semiconductor RQ3L060BG Power MOSFET
Published: 2024-01-18 | Updated: 2024-02-01