New RF JFET Transistors
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.09.07.2023
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Qorvo QPD2160D 1600µm Discrete GaAs pHEMTProvides 32.5dBm of output power at P1dB, 10.4dB gain, and 63% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2120D 1200µm Discrete GaAs pHEMTProvides 31dBm of output power at P1dB, 11.5dB gain, and 57% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2080D 800µm Discrete GaAs pHEMTProvides 29.5dBm of output power at P1dB, 11.5dB gain, and 56% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2060D 600µm Discrete GaAs pHEMTProvides 28dBm of output power at P1dB, 12dB gain, and 55% power-added efficiency at 1dB.19.04.2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.14.02.2022