RAMXEED MB85RS256B/128B/64/64V/64VY/16/16N FeRAM Chips
RAMXEED MB85RS256B/128B/64/64V/64VY/16/16N Ferroelectric Random Access Memory (FeRAM) Chips support a wide range of capacities, from 16Kbit to 256Kbit. These chips are configured with 2,048 to 8192 words x 8bits, using ferroelectric process and silicon-gate CMOS process technologies to form the nonvolatile memory cells. The FeRAM chips feature a Serial Peripheral Interface (SPI) and 1012 read/write cycle endurance. These chips can retain data without a backup battery, unlike SRAM. The FeRAM chips operate at 20MHz or 33MHz, with power supply voltages ranging from 2.7V to 3.6V and 3V to 5.5V. These chips are available in SOP-8 (150mil) and SON-8 (2mm x 3mm) packages.
Features
- Serial Peripheral Interface (SPI)
- 1012 cycles read/write cycle endurance
- 10 years (85°C), 95 years (55°C), and 200 years or more (35°C) data retention
- Package:
- SOP-8 (150mil) (MB85RS256B/MB85RS128B/MB85RS64/MB85RS64V/MB85RS16)
- SOP-8 (150mil) and SON-8 (2mm x 3mm) (MB85RS16N)
Specifications
- Memory density:
- 256Kbit (32,768 word x 8bit) (MB85RS256B)
- 128Kbit (16,384 word x 8bit) (MB85RS128B)
- 64Kbit (8,192 word x 8bit) (MB85RS64/MB85RS64V)
- 16Kbit (2,048 word x 8bit) (MB85RS16/MB85RS16N)
- Operating frequency:
- 33MHz (MB85RS256B/MB85RS128B)
- 20MHz (MB85RS64/MB85RS64V/MB85RS16/MB85RS16N)
- Operating power supply voltage range:
- 2.7V to 3.6V (MB85RS256B/MB85RS128B/MB85RS64/MB85RS16/MB85RS16N)
- 3V to 5.5V (MB85RS64V)
- Operating temperature range:
- -40°C to 95°C (MB85RS16N)
- -40°C to 85°C (MB85RS256B/MB85RS128B/MB85RS64/MB85RS64V/MB85RS16)
Related Products
RAMXEED FRAM (Ferroelectric Random Access Memory)
Non-volatile memory featuring high read/write endurance and low power consumption.