Qorvo TQP3M9040 & TQP3M9041 Dual Low Noise Amplifiers

Qorvo TQP3M9040 and TQP3M9041 Dual Low Noise Amplifiers (LNA) consist of a single monolithic GaAs (Gallium Arsenide) E-pHEMT (Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor) die and integrate bias circuitry as well as shut-down capability. This design enables the TQP3M9040 and TQP3M9041 LNAs to be useful for both Frequency Division Duplex (FDD) and Time Division Duplex (TDD) applications. Both devices do not require a negative supply for operation and are bias adjustable for both drain current and voltage. These balanced amplifiers are optimized for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower mounted amplifiers.    

The Qorvo TQP3M9040 and TQP3M9041 Dual Low Noise Amplifiers are offered in a 4.0mm x 4.0mm QFN16 package and is RoHS compliant and Halogen-free.

Features

  • Frequency range
    • TQP3M9040: 1.5GHz to 2.3GHz
    • TQP3M9041: 2.3GHz to 6.0GHz
  • Ultra low noise figure (single channel)
    • TQP3M9040: 0.59dB 
    • TQP3M9041: 0.33dB
  • High gain
    • TQP3M9040: 18dB
    • TQP3M9041: 18.4dB
  • High linearity
    • TQP3M9040: +21 dBm Input IP3
    • TQP3M9041: +20 dBm Input IP3
  • Integrated shut-down biasing feature
  • 5V voltage
  • 57mA current
  • Positive supply only needed
  • Bias adjustable
  • -40°C to +105°C operating temperature range
  • 4.0mm x 4.0mm x 0.85 QFN16 package
  • RoHS compliant

Applications

  • 3G and 4G wireless infrastructure
  • FDD / TDD
  • Tower mounted amplifiers
  • WCDMA and LTE

Datasheets

Pin Designations

Qorvo TQP3M9040 & TQP3M9041 Dual Low Noise Amplifiers
Published: 2013-08-01 | Updated: 2022-03-11