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Qorvo QPD1426/QPD1426L GaN RF Power Transistors

Qorvo QPD1426/QPD1426L GaN RF Power Transistors are 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz, providing typically 53.5dBm of saturated output power with 17dB of large-signal gain and 70% drain efficiency.

The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller, lighter power amplifiers and lower thermal management costs. The Qorvo QPD1426/QPD1426L is ideally suited for radar applications and is housed in an industry-standard air cavity package. The devices support both CW and pulsed operations.

Features

  • 1.2GHz to 1.4GHz operating frequency range
  • 53.5dBm saturated output power PSAT
  • 70% drain efficiency at PSAT
  • 17dB large signal gain at PSAT
  • Bias of VDS = +50V, IDQ = 350mA
  • NI-400 package
  • 10.16mm x 10.16mm package dimensions

Applications

  • L-Band radar
  • Professional and military radio communications
  • Test instrumentation

Datasheets

QPD1426/QPD1426L Block Diagram

Block Diagram - Qorvo QPD1426/QPD1426L GaN RF Power Transistors

Development Tool

Published: 2026-09-30 | Updated: 2026-10-06