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Qorvo QPD1028 & QPD1028L 750W GaN on SiC Transistors

Qorvo QPD1028 and QPD1028L 750W GaN on SiC Transistors are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.

The Qorvo QPD1028 and QPD1028L GaN on SiC Transistors are housed in an industry-standard NI-780 air cavity package and are ideally suited for radar applications. The QPD1028L package includes an ear flange for bolt-down placement.

Features

  • 1.2GHz to 1.4GHz frequency range
  • 59dBm saturated output power (PSAT)
  • 70% drain efficiency at PSAT
  • 18dB large signal gain at PSAT
  • Bias: VDS=+65V, IDQ=750mA
  • -40°C +85°C operating temperature range
  • 20.57mm x 9.78mm x 3.63mm NI-780 package
  • Halogen-free, lead-free, and RoHS compliant

Applications

  • L-Band radar
  • ISM

Datasheets

Development Tools

Qorvo QPD1028 & QPD1028L Evaluation Boards

Demonstration and development platforms for the QPD1028 and QPD1028L 750W GaN on SiC Transistors.

Learn Moreabout Qorvo QPD1028 & QPD1028L Evaluation Boards View Productsrelated to Qorvo QPD1028 & QPD1028L Evaluation Boards

Block Diagram

Block Diagram - Qorvo QPD1028 & QPD1028L 750W GaN on SiC Transistors

QPD1028 Package Outline

Mechanical Drawing - Qorvo QPD1028 & QPD1028L 750W GaN on SiC Transistors

QPD1028L Package Outline

Mechanical Drawing - Qorvo QPD1028 & QPD1028L 750W GaN on SiC Transistors
Published: 2021-12-09 | Updated: 2022-03-15