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onsemi MMBD150xA Small Signal Switch Diodes

onsemi MMBD150xA Small Signal Switching Diodes have a maximum repetitive reverse voltage (VRRM) of 200V and an average rectified forward current (IF(AV)) of 200mA. These devices are available in a SOT-23 or SOT-23-3 package. The onsemi MMBD150xA is for general usage and suitable for many applications.

Applications

  • High-speed switching circuits
  • Signal processing
  • Voltage clamping and protection
  • Level shifting
  • Mixers and detectors in RF circuits
  • General-purpose rectification
  • Logic gate implementation
  • Pulse shaping

Specifications

  • 200V peak repetitive reverse voltage (VRRM)
  • 200mA average rectified forward current (IF(AV))
  • Non-repetitive peak surge current (IFSM)
    • Pulse width = 1.0s is 1.0A
    • Pulse width = 1.0µs is 2.0A
  • Forward voltage (VF)
    • IF = 1.0mA: 620mV (min.)/720mV (max.)
    • IF = 10mA: 720mV (min.)/830mV (max.)
    • IF = 50mA: 800mV (min.)/890mV (max.)
    • IF = 100mA: 830mV (min.)/930mV (max.)
    • IF = 200mA: 0.84V (min.)/1.10V (max.)
    • IF = 300mA: 0.90V (min.)/1.15V (max.)
  • -55°C to +150°C operating junction temperature (TJ)
  • 350mW power dissipation (PD)
  • 200V (min.) breakdown voltage (VR) (IR = 5.0µA)
  • 4.0pF (max.) total capcitance (CT) (VR = 0, f = 1.0MHz)
  • Reverse current
    • VR = 125V: 1.0nA (max.)
    • VR = 125V, TA = 150°C: 3.0µA (max.)
    • VR = 180V: 10.0nA (max.)
    • VR = 180V, TA = 150°C: 5.0µA (max.)

Connection Diagrams

Chart - onsemi MMBD150xA Small Signal Switch Diodes
Published: 2025-05-20 | Updated: 2025-06-20