onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs
onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs use the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO-247 4−lead package. The onsemi FGY4LxxT120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like solar inverter, UPS and ESS.
Features
- Maximum junction temperature (TJ) of 175°C
- Collector current
- FGY4L75T120SWD - 75A
- FGY4L100T120SWD - 100A
- FGY4L140T120SWD - 140A
- FGY4L160T120SWD - 160A
- Positive temperature coefficient
- High current capability
- Smooth and optimized switching
- Low switching loss
- RoHS compliant
Applications
- Solar inverter
- UPS
- Energy storage system
Pin Connections
View Results ( 4 ) Page
| Part Number | Datasheet | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation |
|---|---|---|---|---|
| FGY4L140T120SWD |  |
1.7 V | 200 A | 1.25 kW |
| FGY4L160T120SWD | |
1.7 V | 200 A | 1.5 kW |
| FGY4L100T120SWD | |
1.7 V | 200 A | 1.071 kW |
| FGY4L75T120SWD | |
1.37 V | 150 A | 652 W |
Published: 2024-07-23
| Updated: 2024-08-08