onsemi EliteSiC 1200V M3e MOSFETs

onsemi EliteSiC 1200V M3e MOSFETs are 3rd generation MOSFETs in a bare die format, ensuring they are optimized for high-power applications. These MOSFETs offer low on-resistance, and the top and back metal options are suitable for multiple packaging technologies, such as soldering, sintering, wire-bond, die-top copper, and ribbon bonds. These M3e MOSFETs ensure packaging flexibility, helping reduce the system size and application complexity while increasing power density and efficiency in traction inverter applications in electric vehicles. onsemi EliteSiC 1200V M3e MOSFETs feature a high blocking voltage of 1200V and provide improved efficiency and range of up to 5% in battery electric vehicle traction inverters.

Features

  • 3rd generation SiC MOSFET
  • High blocking voltage of 1200V
  • Low conduction losses over temperature
  • Top and back metal options
  • Bare die format

Applications

  • Main traction inverters
  • High voltage DC/DC converters
  • Off-board chargers
Published: 2024-07-22 | Updated: 2024-07-24