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onsemi FGHL50T65SQDT IGBTs

onsemi FGHL50T65SQDT IGBT is a 4th generation field stop IGBT offering optimal performance. These IGBTs enable easy parallel operation with low conduction and switching losses. onsemi FGHL50T65SQDT is ideal for applications where low conduction and switching losses are essential, including solar inverters, uninterruptible power supplies (UPS), telecom, energy storage systems (ESS), and power factor correction (PFC).

Features

  • Positive temperature coefficient
  • 1.47V typical VCE(sat) at 50A IC low saturation voltage
  • Positive temperature coefficient for easy parallel operating
  • Fast switching
  • +175°C maximum junction temperature
  • High current capability
  • All parts ILM tested 
  • High input impedance
  • Tighten parameter distribution
  • Lead-free and RoHS compliant

Applications

  • Solar inverters
  • UPS
  • Telecom
  • ESS
  • PFC

Specifications

  • 650V Collector to emitter voltage
  • ±20V Gate to emitter voltage
  • ±30V Transient gate to emitter voltage
  • 100A @ TC = 25°C Collector current
  • 50A @ TC = 25°C Collector current
  • 200A Pulsed Collector current
  • 75A @ TC = 25°C Diode forward current
  • 50A @ TC = 25°C Diode forward current
  • 300A Pulsed Diode Maximum forward current
  • 268W @ TC = 25°C Maximum power dissipation
  • 134W @ TC = 100°C Maximum power dissipation
  • -55 to +175°C Operating junction / storage temperature range
  • 265°C Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

Overview

onsemi FGHL50T65SQDT IGBTs
Published: 2020-06-16 | Updated: 2024-06-05