onsemi AFGHL40T65SQ & AFGHL50T65SQ IGBTs
onsemi AFGHL40T65SQ and AFGHL50T65SQ IGBTs are 4th generation high-speed field-stop IGBTs ideal for automotive applications. The AFGHL40T65SQ and AFGHL50T65SQ IGBTs offer higher reliability and optimum performance for hard and soft switching. The onsemi AFGHL40T65SQ and AFGHL50T65SQ IGBTs are AEC Q101 qualified and provide very low switching and conduction losses.
Features
- AEC-Q101 qualified
- +175°C maximum junction temperature
- Positive temperature coefficient for easy parallel operating
- High current capability
- 1.6V typical VCE(Sat) at 50A IC low saturation voltage
- 100% of the parts are tested for ILM
- Fast switching
- Tight parameter distribution
- RoHS compliant
Applications
- Automotive
- Hybrid/electric vehicle (HEV/EV) onboard chargers
- HEV-EV DC-DC converters
- Totem pole bridgeless power factor correction (PFC)
- Positive temperature coefficient (PTC)
Specifications
- AFGHL40T65SQ
- 650V collector-to-emitter voltage
- ±20V gate-to-emitter voltage
- ±30V transient gate-to-emitter voltage
- 40A at TC = +100°C collector current
- 80A at TC = +25°C collector current
- 160A pulsed collector current
- 239W at TC = +25°C maximum power dissipation
- 119W at TC = +100°C maximum power dissipation
- -55 to +175°C operating junction/storage temperature range
- 300°C maximum lead temperature for soldering purposes, 1/8" from the case for 5s
- AFGHL50T65SQ
- 650V collector-to-emitter voltage
- ±20V gate-to-emitter voltage
- ±30V transient gate-to-emitter voltage
- 50A at TC = 100°C collector current
- 80A at TC = 25°C collector current
- 200A pulsed collector current
- 268W at TC = 25°C maximum power dissipation
- 134W at TC = 100°C maximum power dissipation
- -55 to +175°C Operating junction/storage temperature range
- 300°C maximum lead temperature for soldering purposes, 1/8" from the case for 5s
Datasheets
Published: 2020-06-16
| Updated: 2024-06-05