onsemi FODM8801 OptoHiT™ Phototransistors
onsemi FODM8801 OptoHiT™ Phototransistors are first-of-their-kind phototransistors, utilizing a leading-edge, proprietary process technology to achieve high operating temperature characteristics up to +125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS. onsemi FODM8801 devices are ideally suited for use in DC-DC converters.Features
- Utilizing proprietary process technology to achieve high operating temperature up to +125°C
- Guaranteed Current Transfer Ratio (CTR) specifications across full temperature range
- Excellent CTR linearity at high temperature
- CTR at very low input current, IF
- High isolation voltage regulated by safety agency, UL1577, 3750 VACRMS for 1 min. and DIN EN/IEC60747-5-2 (pending approval)
- Compact half pitch, mini-flat, 4-pin package (1.27mm lead pitch, 2.4mm maximum standoff height)
- >5mm creepage and clearance distance
- Applicable to Infrared Ray reflow, +245°C
Applications
- Ground-loop isolation, signal-noise isolation
- Communications
- Adapters
- Chargers
- Consumer
- Appliances
- Set-top boxes
- Industrial
- Power supplies
- Motor control
- Programmable logic control
- DC-DC converters
Schematic
Published: 2013-09-11
| Updated: 2022-03-11
