onsemi FODM8801 OptoHiT™ Phototransistors

onsemi FODM8801 OptoHiT™ Phototransistors are first-of-their-kind phototransistors, utilizing a leading-edge, proprietary process technology to achieve high operating temperature characteristics up to +125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS. onsemi FODM8801 devices are ideally suited for use in DC-DC converters.

Features

  • Utilizing proprietary process technology to achieve high operating temperature up to +125°C
  • Guaranteed Current Transfer Ratio (CTR) specifications across full temperature range
  • Excellent CTR linearity at high temperature
  • CTR at very low input current, IF
  • High isolation voltage regulated by safety agency, UL1577, 3750 VACRMS for 1 min. and DIN EN/IEC60747-5-2 (pending approval)
  • Compact half pitch, mini-flat, 4-pin package (1.27mm lead pitch, 2.4mm maximum standoff height)
  • >5mm creepage and clearance distance
  • Applicable to Infrared Ray reflow, +245°C

Applications

  • Ground-loop isolation, signal-noise isolation
  •  Communications
    • Adapters
    • Chargers
  • Consumer
    • Appliances
    • Set-top boxes
  • Industrial
    • Power supplies
    • Motor control
    • Programmable logic control
  • DC-DC converters

Schematic

onsemi FODM8801 OptoHiT™ Phototransistors
Published: 2013-09-11 | Updated: 2022-03-11